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this is information on a product in full production. july 2012 doc id 018784 rev 4 1/14 14 STH260N6F6-2 n-channel 60 v, 1.7 m typ., 180 a stripfet? vi deepgate? power mosfet in h2pak-2 package datasheet ? production data features low gate charge very low on-resistance high avalanche ruggedness applications switching applications description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram order code v dss r ds(on) max i d STH260N6F6-2 60 v < 2.4 m 180 a h 2 pak-2 1 2 3 tab !-v $4!" ' 3 table 1. device summary order code marking package packaging STH260N6F6-2 260n6f6 h 2 pak-2 tape and reel www.st.com
contents STH260N6F6-2 2/14 doc id 018784 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STH260N6F6-2 electrical ratings doc id 018784 rev 4 3 /14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 60 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 180 a i d drain current (continuous) at t c = 100 c 180 a i dm (1) 1. current limited by package. drain current (pulsed) 720 a p tot total dissipation at t c = 25 c 3 00 w derating factor 2 w/c t stg storage temperature - 55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.5 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu. thermal resistance junction-pcb max 3 5c/w t l maximum lead temperature for soldering purpose 3 00 c
electrical characteristics STH260N6F6-2 4/14 doc id 018784 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a 60 v i dss zero gate voltage drain current (v gs = 0) v ds = 60 v 1 a v ds = 60 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 60 a 1.7 2.4 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 11800 pf c oss output capacitance - 12 3 5- pf c rss reverse transfer capacitance 488 pf q g total gate charge v dd = 3 0 v, i d = 120 a, v gs = 10 v (see figure 14) 18 3 nc q gs gate-source charge - 5 3 -nc q gd gate-drain charge 41 nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 3 0 v, i d = 60 a r g =4.7 v gs = 10 v (see figure 13) - 3 1.4 165 - ns ns t d(off) t f turn-off-delay time fall time - 144.4 62.6 - ns ns
STH260N6F6-2 electrical characteristics doc id 018784 rev 4 5/14 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current 180 a i sdm (1) 1. current limited by package. source-drain current (pulsed) 720 a v sd (2) 2. pulsed: pulse duration = 3 00 s, duty cycle 1.5% forward on voltage i sd = 180 a, v gs = 0 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 120 a, v dd = 48 v di/dt = 100 a/s, t j = 150 c (see figure 15) - 55.6 116 3 .8 ns nc a
electrical characteristics STH260N6F6-2 6/14 doc id 018784 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs. temperature figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=175c tc=25c s ingle p u l s e am0906 8 v2 10 -5 10 -4 10 -3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/ tp s ingle p u l s e =0.5 2 8 0tok i d 150 100 50 0 0 2 v d s (v) (a) 1 3 200 250 5v 6v v g s =10v 300 350 400 am09069v1 i d 150 100 50 0 0 2 v g s (v) 4 (a) 1 3 5 200 250 300 350 400 v d s =2v am09070v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.6 0.7 0. 8 0.9 1.0 1.1 175 i d =1ma am09071v1 r d s (on) 1.66 1.62 40 i d (a) (m ) 20 60 1.70 1.74 v g s =10v 100 8 0 1.7 8 am09072v2
STH260N6F6-2 electrical characteristics doc id 018784 rev 4 7/14 figure 8. gate charge vs. gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs. temperature figure 11. normalized on-resistance vs. temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 50 q g (nc) (v) 200 8 100 150 10 v dd =30v i d =120a 12 am09073v1 c 1000 100 0.1 10 v d s (v) (pf) 1 10000 ci ss co ss cr ss f=1mhz am09074v1 v g s (th) 0. 8 0.6 0.4 0.2 -75 t j (c) (norm) -25 1.0 75 25 125 175 i d =250 a 1.2 am09075v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 175 0 i d =60a v g s =10v am09076v1 v s d 0 40 i s d (a) (v) 20 100 60 8 0 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-55c t j =150c t j =25c 120 am09077v1
test circuits STH260N6F6-2 8/14 doc id 018784 rev 4 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am01473v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STH260N6F6-2 package mechanical data doc id 018784 rev 4 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STH260N6F6-2 10/14 doc id 018784 rev 4 table 8. h2pak 2 leads mechanical data dim. mm min. typ. max. a4. 3 0 - 4.80 a1 0.0 3 0.20 c1.17 1. 3 7 e4.98 5.18 e0.50 0.90 f0.78 0.85 h 10.00 10.40 h1 7.40 7.80 l15. 3 0 15.80 l1 1.27 1.40 l2 4.9 3 5.2 3 l 3 6.85 7.25 l4 1.5 1.7 m2.6 2.9 r0.20 0.60 v0 8
STH260N6F6-2 package mechanical data doc id 018784 rev 4 11/14 figure 19. h2pak 2 leads drawing 8 159712_c
package mechanical data STH260N6F6-2 12/14 doc id 018784 rev 4 figure 20. h2pak 2 recommended footprint
STH260N6F6-2 revision history doc id 018784 rev 4 1 3 /14 5 revision history table 9. document revision history date revision changes 3 1-may-2011 1 first release. 25-aug-2011 2 updated mechanical data. 01-feb-2012 3 updated table 2: absolute maximum ratings . minor text changes. 06-jul-2012 4 section 2.1: electrical characteristics (curves) has been added.
STH260N6F6-2 14/14 doc id 018784 rev 4 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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